Backside thinning, using silicon doping-selective etching, for the preparation of backside illuminated (BSI) CMOS sensors. Tailored HNA chemistry (HF: HNO3: CH3COOH) is used to stop at a dedicated p+/p- silicon transition layer with high p+/p- selectivity, providing sub‑micron total thickness variation.

Hello there, I’m Iwin Lee and I’m a software engineer currently working at NexGen Wafer Systems as a Software Lead. I’m passionate about software development and in providing efficient software solutions and designs in the semiconductor industry.