Doping-selective etching of silicon for wafer thinning in the fabrication of backside-illuminated stacked CMOS image sensors

2024-06-17T10:50:02+02:00

Backside thinning, using silicon doping-selective etching, for the preparation of backside illuminated (BSI) CMOS sensors. Tailored HNA chemistry (HF: HNO3: CH3COOH) is used to stop at a dedicated p+/p- silicon transition layer with high p+/p- selectivity, providing sub‑micron total thickness variation.

Doping-selective etching of silicon for wafer thinning in the fabrication of backside-illuminated stacked CMOS image sensors2024-06-17T10:50:02+02:00
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